SiGe based line tunneling field-effect transistors
نویسندگان
چکیده
منابع مشابه
Axial SiGe heteronanowire tunneling field-effect transistors.
We present silicon-compatible trigated p-Ge/i-Si/n-Si axial heteronanowire tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our TFETs have high I(ON) ~ 2 μA/μm, fully suppressed ambipolarity, and a subthreshold slope SS ~ 140 mV/decade over 4 decades of current with lowest ...
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ژورنال
عنوان ژورنال: Composants nanoélectroniques
سال: 2018
ISSN: 2516-3914
DOI: 10.21494/iste.op.2018.0223